发明名称 Controller and non-volatile semiconductor memory device
摘要 A controller includes a generation unit configured to aggregate comparison results between second threshold voltage levels held in the memory cells and predetermined third threshold voltage levels, and generate a histogram of the second threshold voltage levels, an estimation unit configured to estimate statistical parameter of a distribution of the second threshold voltage levels with respect to a first threshold voltage level according to writing data, based on the histogram, and a determination unit configured to determine a fifth threshold voltage level defining a boundary of a fourth threshold voltage level indicating a read result of the memory cells from the third threshold voltage levels based on the statistical parameter in such a manner that mutual information amount between the first threshold voltage level and the fourth threshold voltage level becomes maximum.
申请公布号 US8149623(B2) 申请公布日期 2012.04.03
申请号 US20100715772 申请日期 2010.03.02
申请人 UCHIKAWA HIRONORI;SAKURADA KENJI;KABUSHIKI KAISHA TOSHIBA 发明人 UCHIKAWA HIRONORI;SAKURADA KENJI
分类号 G11C16/04 主分类号 G11C16/04
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