发明名称 |
Method of manufacturing single crystal |
摘要 |
A method of manufacturing a single crystal based on a Czochralski method of applying a horizontal magnetic field, wherein the single crystal is pulled in such a manner that a radial magnetic field intensity gradient &Dgr;Br/&Dgr;Rc in a direction connecting central points of magnetic field generation coils exceeds 5.5 (Gauss/mm) and becomes 10 (Gauss/mm) or below where an origin O is a central part of the single crystal on a solid-liquid interface, &Dgr;Br (Gauss) is a variation in a magnetic field intensity from the origin O to a crucible inner wall on a surface of a melt, and &Dgr;Rc (mm) is a radial distance from the origin O to the crucible inner wall on the surface of the melt. |
申请公布号 |
US8147611(B2) |
申请公布日期 |
2012.04.03 |
申请号 |
US20060988295 |
申请日期 |
2006.04.27 |
申请人 |
SAKURADA MASAHIRO;FUSEGAWA IZUMI;SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
SAKURADA MASAHIRO;FUSEGAWA IZUMI |
分类号 |
C30B15/20 |
主分类号 |
C30B15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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