发明名称 Fast Voltage Regulators For Charge Pumps
摘要 A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.
申请公布号 US2012074923(A1) 申请公布日期 2012.03.29
申请号 US201113306950 申请日期 2011.11.29
申请人 TRAN HIEU VAN;NGUYEN SANG THANH;LY ANH;NGUYEN HUNG O.;LAU WINGFU AARON;JAFFARI NASRIN;VU THUAN TRONG;SARIN VISHAL;HOANG LOC B.;SILICON STORAGE TECHNOLOGY, INC. 发明人 TRAN HIEU VAN;NGUYEN SANG THANH;LY ANH;NGUYEN HUNG O.;LAU WINGFU AARON;JAFFARI NASRIN;VU THUAN TRONG;SARIN VISHAL;HOANG LOC B.
分类号 G05F3/16 主分类号 G05F3/16
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