发明名称 METHOD OF MANUFACTURING CAPACITOR, AND CAPACITOR, CIRCUIT SUBSTRATE AND SEMICONDUCTOR APPARATUS
摘要 A method of manufacturing a capacitor includes forming a first ceramic film on a first base made of a metal, forming a second ceramic film on a second base made of a metal, forming a first copper electrode pattern and a first copper via-plug on a surface of one of the first and second ceramic films, the electrode pattern and the via-plug being separate from each other, bonding the first and second ceramic films together with the first electrode pattern and the via-plug therebetween, by applying a pulsed voltage between the first base and the second base while the first base and the second base are pressed so that the first ceramic film and the second ceramic film are pressed on each other, and removing the second base.
申请公布号 US2012074521(A1) 申请公布日期 2012.03.29
申请号 US201113228091 申请日期 2011.09.08
申请人 IMANAKA YOSHIHIKO;AMADA HIDEYUKI;KUMASAKA FUMIAKI;FUJITSU LIMITED 发明人 IMANAKA YOSHIHIKO;AMADA HIDEYUKI;KUMASAKA FUMIAKI
分类号 H01L29/92;B32B37/02;B32B37/14;B32B38/10;B82Y30/00;B82Y99/00;H01G4/12;H05K7/00 主分类号 H01L29/92
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