发明名称 |
Method for optimizing distribution profile of cell threshold voltages in NAND-type flash memory device |
摘要 |
A method is operable in a non-volatile memory device of a type having a plurality of blocks formed of a plurality of memory strings in which a plurality of memory cells are connected in series in which a programming operation is conducted after erasing memory cells. The method essentially including the steps of: erasing data held in the memory cells in a unit of the block; and applying a soft program voltage to word lines coupled with the erased memory cells in the unit of the block. The method improves a threshold voltage profile after an erasing cycle, whereby program stress can be minimized in a follow-up program operation.
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申请公布号 |
US6594178(B2) |
申请公布日期 |
2003.07.15 |
申请号 |
US20010872366 |
申请日期 |
2001.05.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI SUN-MI;LEE YEONG-TAEK |
分类号 |
G11C16/02;G11C16/04;G11C16/06;G11C16/12;G11C16/30;G11C16/34;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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