| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser element that can suppresses an increase in element resistance by preventing segregation of a dopant in a region near a hetero interface, thereby enabling both stable operation and high output under high temperatures. <P>SOLUTION: In a semiconductor laser element 1, an n-type cladding layer 5, an active layer 6, a first p-type cladding layer 7, and a ridge 12 are formed above an n-type semiconductor substrate 2. The ridge 12 includes a stack of a second p-type cladding layer 9, a p-type band-discontinuity relaxation layer 10, and a p-type cap layer 11. The p-type cap layer 11 includes an alternate stack of m+1 p-type GaAs layers and m p-type GaInP layers. The first layer of the p-type GaAs layers contacts the p-type band-discontinuity relaxation layer 10 and the m+1 th layer of the GaAs layers contacts a first electrode 14. Mg is doped into the first and second p-type cladding layers 7 and 9 and the p-type band-discontinuity relaxation layer 10, and Zn is doped into the m+1 p-type GaAs layers and the m p-type GaInP layers. The thickness of each p-type GaAs layer is 10 nm or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
