| 摘要 |
A cleaning agent for a semiconductor substrate, which is capable of exerting cleaning power equivalent to that of an SPM cleaning agent, greatly improving damage of a semiconductor substrate by the SPM cleaning agent, and efficiently stripping and removing impurities adhered to the surface of the semiconductor substrate, particularly attached substances such as an ion-implanted resist, a cleaning method using the cleaning agent, and a method for producing a semiconductor element are provided. The cleaning agent for a semiconductor substrate comprises sulfuric acid, hydrogen peroxide and an alkylene carbonate. The method for cleaning a semiconductor substrate comprises cleaning the semiconductor substrate with sulfuric acid, hydrogen peroxide and an alkylene carbonate in combination. |
