发明名称 INTEGRATED PASSIVES AND POWER AMPLIFIER
摘要 This disclosure provides systems, methods and apparatus for combining devices deposited on a first substrate, with integrated circuits formed on a second substrate such as a semiconducting substrate or a glass substrate. The first substrate may be a glass substrate. The first substrate may include conductive vias. A power combiner circuit may be deposited on a first side of the first substrate. The power combiner circuit may include passive devices deposited on at least the first side of the first substrate. The integrated circuit may include a power amplifier circuit disposed on and configured for electrical connection with the power combiner circuit, to form a power amplification system. The conductive vias may include thermal vias configured for conducting heat from the power amplification system and/or interconnect vias configured for electrical connection between the power amplification system and a conductor on a second side of the first substrate.
申请公布号 US2012075216(A1) 申请公布日期 2012.03.29
申请号 US201113235158 申请日期 2011.09.16
申请人 BLACK JUSTIN PHELPS;SHENOY RAVINDRA V.;GOUSEV EVGENI PETROVICH;HADJICHRISTOS ARISTOTELE;MYERS THOMAS ANDREW;KIM JONGHAE;VELEZ MARIO FRANCISCO;LAN JE-HSIUNG JEFFREY;LO CHI SHUN;QUALCOMM MEMS TECHNOLOGIES, INC. 发明人 BLACK JUSTIN PHELPS;SHENOY RAVINDRA V.;GOUSEV EVGENI PETROVICH;HADJICHRISTOS ARISTOTELE;MYERS THOMAS ANDREW;KIM JONGHAE;VELEZ MARIO FRANCISCO;LAN JE-HSIUNG JEFFREY;LO CHI SHUN
分类号 G06F3/041;H01L21/02;H01L27/06;H03F3/04 主分类号 G06F3/041
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