发明名称 |
INTEGRATED PASSIVES AND POWER AMPLIFIER |
摘要 |
This disclosure provides systems, methods and apparatus for combining devices deposited on a first substrate, with integrated circuits formed on a second substrate such as a semiconducting substrate or a glass substrate. The first substrate may be a glass substrate. The first substrate may include conductive vias. A power combiner circuit may be deposited on a first side of the first substrate. The power combiner circuit may include passive devices deposited on at least the first side of the first substrate. The integrated circuit may include a power amplifier circuit disposed on and configured for electrical connection with the power combiner circuit, to form a power amplification system. The conductive vias may include thermal vias configured for conducting heat from the power amplification system and/or interconnect vias configured for electrical connection between the power amplification system and a conductor on a second side of the first substrate. |
申请公布号 |
US2012075216(A1) |
申请公布日期 |
2012.03.29 |
申请号 |
US201113235158 |
申请日期 |
2011.09.16 |
申请人 |
BLACK JUSTIN PHELPS;SHENOY RAVINDRA V.;GOUSEV EVGENI PETROVICH;HADJICHRISTOS ARISTOTELE;MYERS THOMAS ANDREW;KIM JONGHAE;VELEZ MARIO FRANCISCO;LAN JE-HSIUNG JEFFREY;LO CHI SHUN;QUALCOMM MEMS TECHNOLOGIES, INC. |
发明人 |
BLACK JUSTIN PHELPS;SHENOY RAVINDRA V.;GOUSEV EVGENI PETROVICH;HADJICHRISTOS ARISTOTELE;MYERS THOMAS ANDREW;KIM JONGHAE;VELEZ MARIO FRANCISCO;LAN JE-HSIUNG JEFFREY;LO CHI SHUN |
分类号 |
G06F3/041;H01L21/02;H01L27/06;H03F3/04 |
主分类号 |
G06F3/041 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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