发明名称 METHOD OF DRIVING SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND OPTICAL PULSE TESTER USING THE LIGHT-EMITTING DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of driving a semiconductor light-emitting element that enables a semiconductor light-emitting element, which can emit light having a plurality of wavelength bands, to operate with high optical output, and to provide a light-emitting device, and a small-sized and high-performance optical pulse tester using the light-emitting device. <P>SOLUTION: There is provided a method of driving a semiconductor light-emitting element, the semiconductor light-emitting element having a structure in which an active layer 13a having a gain wavelength &lambda;<SB POS="POST">1</SB>in the 1.55 &mu;m band and an active layer 13b having a gain wavelength &lambda;<SB POS="POST">2</SB>in the 1.3 &mu;m band are optically coupled with each other in the light waveguide direction and arranged in series in the order of the length of the gain wavelengths &lambda;<SB POS="POST">1</SB>and &lambda;<SB POS="POST">2</SB>, and in which a diffraction grating 20 with a Bragg wavelength equal to the shorter gain wavelength &lambda;<SB POS="POST">2</SB>is formed in the vicinity of the active layer 13b having the shorter gain wavelength &lambda;<SB POS="POST">2</SB>and in the vicinity of a butt joint coupling part 19 between the active layer 13a and the active layer 13b. An upper electrode provided above the active layer 13b and a lower electrode provided on a bottom surface of a semiconductor substrate are short-circuited so that a leakage current does not flow into the active layer 13b when a driving current is applied to the active layer 13a. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012064921(A) 申请公布日期 2012.03.29
申请号 JP20110113132 申请日期 2011.05.20
申请人 ANRITSU CORP 发明人 MORIMOTO SHINTARO;MORI HIROSHI;NAGASHIMA YASUAKI
分类号 H01S5/026;H01S5/0625;H01S5/125 主分类号 H01S5/026
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