| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve resistance to a surge, in a semiconductor device having a semiconductor chip mounted on a lead frame. <P>SOLUTION: An n-type buried layer 11 and an epitaxial layer 12, and a P-type semiconductor layer 13 are arranged on a surface of a P-type semiconductor substrate 10 constituting an IC chip 10A. A metal thin film 30 is arranged on a rear face of the semiconductor substrate 10, and conductive paste 40 including silver particles and the like is sandwiched between the metal thin film 30 and a metal island 51. When a surge is applied to a pad electrode 16 arranged on a surface of the semiconductor layer 13, a surge current flowing from the semiconductor layer 13 to the semiconductor substrate 10 is directed to the metal island 51 through the metal thin film 30. <P>COPYRIGHT: (C)2012,JPO&INPIT |
