METHOD OF REMOVING PHOTORESIST AND ETCH-RESIDUES FROM VIAS
摘要
<p>A method of photoresist removal with concomitant de-veiling is provided. The method employs a plasma formed from a gas chemistry comprising O2, NH3 and a fluorine-containing gas, such as CF4. The method is particularly suitable for use in MEMS fabrication processes, such as inkjet printhead fabrication.</p>
