发明名称 |
SEMICONDUCTOR SWITCH ELEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor switch element in minute size using a metal particle. <P>SOLUTION: A semiconductor switch element comprises: a first insulating film 101 in which a trench 105 having a predetermined depth is provided; first wiring 103a and second wiring 103b that are provided on the first insulating film so as to face to each other with the trench therebetween; a metal particle 106 disposed in the trench so as to have a gap between the first wiring and the second wiring; a second insulating film 104 provided on the first wiring and the second wiring; and third wiring 201 provided above the metal particle. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012064790(A) |
申请公布日期 |
2012.03.29 |
申请号 |
JP20100208157 |
申请日期 |
2010.09.16 |
申请人 |
TOSHIBA CORP |
发明人 |
SHINOMIYA HIDEO;TSUNODA HIROAKI |
分类号 |
H01L29/66;B81B5/00;H01L29/06 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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