METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS

摘要

Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.