<p>A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.</p>
申请公布号
WO2012040014(A1)
申请公布日期
2012.03.29
申请号
WO2011US51549
申请日期
2011.09.14
申请人
VARIAN SEMICONDUCTOR EQUIPMENT;CHANG, SHENGWU;OLSON, JOSEPH, C.;SINCLAIR, FRANK;MCCLELLAN, MATTHEW, P.
发明人
CHANG, SHENGWU;OLSON, JOSEPH, C.;SINCLAIR, FRANK;MCCLELLAN, MATTHEW, P.