发明名称 PROCESS OF FORMING A GRID ELECTRODE ON THE FRONT-SIDE OF A SILICON WAFER
摘要 A process of forming a front-grid electrode on a silicon wafer having an ARC layer wherein thin parallel fingers lines that form the front side grid electrode are double printed from a metal paste, and the metal pastes used for the first and second printing differ in their content of glass frit plus optionally present other inorganic additives.
申请公布号 EP2433306(A1) 申请公布日期 2012.03.28
申请号 EP20100722879 申请日期 2010.05.20
申请人 E. I. DU PONT DE NEMOURS AND COMPANY 发明人 ANDERSON, DAVID, KENT;ANDERSON, RUSSELL, DAVID;HANG, KENNETH, WARREN;KAO, SHIH-MING;LAUDISIO, GIOVANNA;LIN, CHENG-NAN;WU, CHUN-KWEI
分类号 H01L31/0224;H01B1/16 主分类号 H01L31/0224
代理机构 代理人
主权项
地址
您可能感兴趣的专利