发明名称 Bonding process by molecular bonding with reduced overlay type misalignment
摘要 The method involves contacting wafers (100, 200) so as to initiate propagation of a bonding wave between the wafers. Predefined bonding curvature (KB) in shape of revolution parabolic is imposed to one of the wafers as a function of inherent curvature before bonding the wafer comprising a series of micro components (110) while the other wafer is free to conform to the predefined bonding curvature. The curvature of each wafer is measured before bonding, and the predefined bonding curvature is calculated. An independent claim is also included for an apparatus for bonding wafers by molecular adhesion, comprising a holding support.
申请公布号 EP2434533(A1) 申请公布日期 2012.03.28
申请号 EP20110176277 申请日期 2011.08.02
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 GAUDIN, GWELTAZ;BROEKAART, MARCEL;CASTEX, ARNAUD
分类号 H01L21/18 主分类号 H01L21/18
代理机构 代理人
主权项
地址