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发明名称
Field-effect-transistor comprising a boron aluminum nitride diamond heterostructure
摘要
申请公布号
EP2082431(B1)
申请公布日期
2012.03.28
申请号
EP20070852863
申请日期
2007.10.19
申请人
RAYTHEON COMPANY
发明人
LAROCHE, JEFFREY R.;HOKE, WILLIAM E.;BERNSTEIN, STEVEN D.;KORENSTEIN, RALPH
分类号
H01L29/267;H01L29/778
主分类号
H01L29/267
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