| 摘要 |
Provided is a manufacturing method of a semiconductor device structure. The method comprises: forming at least one gate line (3005) on a semiconductor substrate (3000); forming a gate side wall (3006) around the gate line (3005); forming a source/drain region (3007) at two sides of the gate line (3005) in the semiconductor substrate (3000); forming a conducting side wall (3009) around an external side of the gate side wall (3006); and implementing isolation of devices at a preset area, the isolated gate line part forming a gate (3011) of a corresponding unit device, and the isolated conducting side wall part forming a contact portion of the corresponding unit device. Also provided is a semiconductor device structure. The present invention is applicable to the manufacturing of a contact portion in an integrated circuit.
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