| 摘要 |
An electrode pad on a conductive semiconductor substrate comprises a conductive substrate (21), an insulating material film (28) formed on the conductive substrate (21), an electrode pad (30) formed on the insulating material film (28), and a wiring electrode (31b, 31c) formed on said insulating material film (28), connected to said electrode pad (30), and having a width different from that of said electrode pad (30), wherein a first thickness (t 2 ) of a first region of said insulating material film (28) on which at least said electrode pad (30) is formed is greater than a second thickness (to) of a second region of said insulating material film (28) on which at least part of said wiring electrode (31b, 31c) is formed and which is a region other than said first region, wherein the width of said wiring electrode (31b, 31c) is smaller than the size of said electrode pad (30), and wherein a trench portion (28c) is formed in said conductive substrate (21), and a part of the first region of said insulating material film (28) is formed in said trench portion (28c) so that an interval between the bottom surface of said trench portion (28c) and said electrode pad (30) equals to said first thickness (t 2 ). |
