发明名称 Non-volatile semiconductor memory device with power saving feature
摘要 A non-volatile semiconductor memory device, which comprises (i) an interface having an input for receiving an input clock and a set of data lines for receiving commands issued by a controller including an erase command; (ii) a module having circuit components in a feedback loop configuration and being driven by a reference clock; (iii) a clock control circuit capable of controllably switching between a first state in which the reference clock tracks the input clock and a second state in which the reference clock is decoupled from the input clock; and (iv) a command processing unit configured to recognize the commands and to cause the clock control circuit to switch from the first state to the second state in response to recognizing the erase command. The module consumes less power when the reference clock is decoupled from the input clock than when the reference clock tracks the input clock.
申请公布号 US8145925(B2) 申请公布日期 2012.03.27
申请号 US20080210580 申请日期 2008.09.15
申请人 OH HAKJUNE;MOSAID TECHNOLOGIES INCORPORATED 发明人 OH HAKJUNE
分类号 G06F1/26;G06F1/32 主分类号 G06F1/26
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