发明名称 Semiconductor memory device and method of controlling same
摘要 A memory cell is provided at an intersection of a word line and a bit line. A sense amplifier circuit senses and amplifies a signal on the bit line. Replica circuits include a replica cell configured to retain certain data fixedly. A signal detection circuit detects an output signal that rises up at the latest timing among output signals output from the plurality of replica circuits respectively and outputs a detection signal. A delay circuit delays the detection signal. The sense amplifier circuit is activated based on the delayed signal.
申请公布号 US8144532(B2) 申请公布日期 2012.03.27
申请号 US20100728167 申请日期 2010.03.19
申请人 KAWASUMI ATSUSHI;KABUSHIKI KAISHA TOSHIBA 发明人 KAWASUMI ATSUSHI
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
主权项
地址