Plasma processing apparatus, plasma processing method, and storage medium

摘要

A plasma processing apparatus having a substrate processing chamber, which enables leakage of plasma into an exhaust space to be prevented. The substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an exhaust space for exhausting gas out of the processing space, and an exhaust flow path that communicates the exhaust space and the processing space together. The plasma processing apparatus further has a grounding component that is electrically grounded and is disposed in the exhaust flow path. The grounding component has a conducting portion made of a conductive material, and the conducting portion has an exposed area exposed to the exhaust flow path in a range of 100 to 1000 cm2.