发明名称 |
Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method |
摘要 |
A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer, and changes the phase to a crystal state or amorphous state when supplied with an electric current via the perovskite layer.
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申请公布号 |
US8143611(B2) |
申请公布日期 |
2012.03.27 |
申请号 |
US20100872497 |
申请日期 |
2010.08.31 |
申请人 |
CHOI YOUNG-SUK;TSUNEKAWA KOJI;CANON ANELVA CORPORATION |
发明人 |
CHOI YOUNG-SUK;TSUNEKAWA KOJI |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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