NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nitride semiconductor light emitting diode and a manufacturing method thereof are provided to alleviate strain by inserting an undoped GaN layer which is grown up at the low temperatures in the inner side of an n-type nitride semiconductor layer as an intermediate layer. CONSTITUTION: An -type nitride semiconductor layer(110) comprises an intermediate layer and a second n-type GaN layer. The intermediate layer is composed of a first n-type GaN layer and an undoped GaN layer. The first n-type GaN layer and the undoped GaN layer are successively formed on a substrate. An active layer(120) is formed on the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(130) is formed on the active layer. A third n-type GaN layer is formed on the second n-type GaN layer. A v-shaped groove is formed on the third n-type GaN layer.