| 摘要 |
PURPOSE: An anti-fuse of a semiconductor device and a manufacturing method thereof are provided to interlink a fuse which is short circuited by migrating copper materials exposed after applying VDD/VSS bias to both ends of the fuse. CONSTITUTION: A bottom wire(305) is formed on a semiconductor substrate(300). A inter-layer insulating film(310) is formed at the semiconductor substrate and the upper side of the bottom wire. A contact plug(320) is formed by flattening and etching the inter-layer insulating film. A plurality of fuse patterns(360) is formed on the contact plug. An insulating layer pattern is formed between the fuse patterns. A sacrificial insulating film is formed on the upper side of the fuse pattern and the insulating layer pattern.
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