| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent self align contact fail between a bit line and a gate electrode by forming a dummy contact plug in a peripheral circuit region. CONSTITUTION: A gate electrode(105) is formed on the upper side of a semiconductor substrate(100). The gate electrode comprises a gate conductive layer(105a), a gate metal layer(105b), and a gate hard mask layer(105c). A bit line contact plug(120) is formed in both sides of the gate electrode. The bit line contact plug is connected to a source/drain region of the semiconductor substrate. A bit line(125) connects with the bit line contact plug. A dummy contact plug(140) is formed on the upper side of the gate electrode. The dummy contact plug is partly overlapped with the bit line and the gate electrode.
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