METHOD FOR FORMING BURIED BIT LINE OF VERTICAL SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a buried bit line of a vertical semiconductor device is provided to simply interlink a drain region and the buried bit line. CONSTITUTION: A first mask layer which limits a domain in which a plurality of pillars(106) is formed on a semiconductor substrate is formed. The plurality of pillars is formed by etching the semiconductor substrate. A second mask layer is formed on the semiconductor substrate so that a side of the pillar is exposed. The side of the pillar exposed by the second mask layer is etched. The second mask layer is eliminated. A liner film(112) is formed on the exposed side of the semiconductor substrate and the pillar. A part of the pillar is exposed by eliminating the liner film. A junction domain(116) is formed on the side in which the pillar is exposed. A buried bit line(120) connected with the junction domain is formed.