| 摘要 |
FIELD: metallurgy. ^ SUBSTANCE: method involves the following stages: preparation of molten metal from pure gallium or from mixture of aluminium and gallium in melting pot, vapouration of gallium or gallium and aluminium from molten metal, decomposition of nitrogen predecessor by thermal influence or by means of plasma and growth of GaN or AlGaN monocrystal on inoculating crystal under pressure of less than 10 bar, under which vapouration of gallium or gallium and aluminium is performed at temperature above the temperature of grown crystal, but at least at 1000C, and at which gas flow of nitrogen gas, hydrogen gas, inert gas or combination of those gases is passed above surface of molten metal so that this gas flow above surface of molten metal prevents the contact of nitrogen predecessor with molten metal; at that, either molten metal is prepared in reaction chamber in melting pot, which, except at least of one carrier gas inlet and at least one carrier gas outlet, is closed on all sides, and at that, gas flow is introduced to melting pot through carrier gas inlet above molten metal and transported with metal vapours of molten metal from melting pot through hole for carrier gas outlet, and nitrogen predecessor is introduced to reaction zone in reaction chamber, or preparation of molten metal involves arrangement of melting pot in reaction chamber; gas flow is introduced to reaction chamber through carrier gas inlet above molten metal, and nitrogen predecessor is introduced to reaction zone in reaction chamber. ^ EFFECT: invention provides the crystal growth by means of reaction of molten gallium with reactive nitrogen predecessor without formation of crust on surface of gallium melt and related problems at crystal growth. ^ 16 cl, 9 dwg |
