发明名称 GRAPHENE QUANTUM DOT LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: A graphene quantum dot light emitting and a manufacturing method thereof are provided to form a band gap of a graphene quantum dot layer small by controlling size and shape of a graphene quantum dot. CONSTITUTION: First graphene(20) is n-type graphene. Second graphene(40) is p-type graphene. A graphene quantum dot layer(30) is located on the first graphene. The graphene quantum dot layer comprises a plurality of graphene quantum dots. The graphene quantum dot layer contain organic solvents. The second grapheme is located on the graphene quantum dot layer. An electron transport layer is located between the n-type grapheme and the graphene quantum dot layer. A hole transport layer is located between the graphene quantum dot layer and the p-type graphene.
申请公布号 KR20120029332(A) 申请公布日期 2012.03.26
申请号 KR20110092235 申请日期 2011.09.09
申请人 SAMSUNG LED CO., LTD. 发明人 HWANG, SUNG WON;KO, GEUN WOO;SIM, SUNG HYUN;CHUNG, HUN JAE;SONE, CHEOL SOO;LEE, JIN HYUN;HONG, BYUNG HEE;BAE, SU KANG
分类号 H01L51/00;H01L33/04;H01L33/22 主分类号 H01L51/00
代理机构 代理人
主权项
地址