发明名称 |
SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS |
摘要 |
Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material and a multiferroic material in contact with the ferromagnetic storage material, wherein the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are located between a first electrode and a second electrode.
|
申请公布号 |
US2012069646(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US20100885012 |
申请日期 |
2010.09.17 |
申请人 |
KRAMER STEPHEN J.;SANDHU GURTEJ S.;MICRON TECHNOLOGY, INC. |
发明人 |
KRAMER STEPHEN J.;SANDHU GURTEJ S. |
分类号 |
G11C11/14;H01L29/82 |
主分类号 |
G11C11/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|