The present invention relates to a polishing pad for CMP. The polishing pad has a shape in which three or more semi-oval or semicircular curves connecting two adjacent valleys on a plane are connected to each other. Also, the polishing pad includes a modified pattern having a predetermined depth. In the polishing pad, slurry may be uniformly dispersed during a polishing process to improve polishing uniformity and increase a polishing rate by adequately adjusting a residence time of the slurry.
申请公布号
WO2012036444(A2)
申请公布日期
2012.03.22
申请号
WO2011KR06748
申请日期
2011.09.09
申请人
LG CHEM, LTD.;KIM, AH-RAM;AHN, BYEONG-IN;SHIN, DONG-MOK