发明名称 POLISHING PAD FOR CMP
摘要 The present invention relates to a polishing pad for CMP. The polishing pad has a shape in which three or more semi-oval or semicircular curves connecting two adjacent valleys on a plane are connected to each other. Also, the polishing pad includes a modified pattern having a predetermined depth. In the polishing pad, slurry may be uniformly dispersed during a polishing process to improve polishing uniformity and increase a polishing rate by adequately adjusting a residence time of the slurry.
申请公布号 WO2012036444(A2) 申请公布日期 2012.03.22
申请号 WO2011KR06748 申请日期 2011.09.09
申请人 LG CHEM, LTD.;KIM, AH-RAM;AHN, BYEONG-IN;SHIN, DONG-MOK 发明人 KIM, AH-RAM;AHN, BYEONG-IN;SHIN, DONG-MOK
分类号 H01L21/304 主分类号 H01L21/304
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