发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element capable of uniformizing a distribution of an injection current density, suppressing a excessive injection current density and having high performance. <P>SOLUTION: The semiconductor light-emitting element comprises: a laminate structure which has a first semiconductor layer, a second semiconductor layer and a light-emitting layer provided between the first semiconductor and the second semiconductor layers, and in which the second semiconductor layer and the light-emitting layer are selectively removed to expose a part of the first semiconductor layer; a first electrode contacting with a part of the first semiconductor layer; a second electrode contacting with the second semiconductor layer and having high transmissivity; and a pad layer provided on the side opposite to the light-emitting layer of the second semiconductor layer, electrically connected to the second electrode, and having lower transmissivity for light than that of the second electrode. The conductivity of the second electrode continuously decreases along a direction from the pad layer to the first electrode. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012060188(A) 申请公布日期 2012.03.22
申请号 JP20110282780 申请日期 2011.12.26
申请人 TOSHIBA CORP 发明人 TACHIBANA KOICHI;KIMURA SHIGEYA;HIKOSAKA TOSHITERU;SATO TAISUKE;OKA TOSHIYUKI;NUNOUE SHINYA
分类号 H01L33/38;H01L33/32 主分类号 H01L33/38
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