发明名称 |
NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
An dielectric film is formed above the semiconductor substrate. A first conductive layer is formed in the dielectric film and extending in a first direction. The first conductive layer is connected to a first select transistor. A second conductive layer formed in the dielectric film and extending in the first direction. The second conductive layer is connected to a second select transistor. A semiconductor layer is connected to both the first and second conductive layers and functioning as a channel layer of a memory transistor. A gate-insulating film is formed on the semiconductor layer. The gate-insulating film includes a charge accumulation film as a portion thereof. A third conductive layer is surrounded by the gate-insulating film. |
申请公布号 |
US2012068256(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113232492 |
申请日期 |
2011.09.14 |
申请人 |
FUKUDA RYO;IWATA YOSHIHISA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUDA RYO;IWATA YOSHIHISA |
分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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