发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF CONTROLLING MEMS-TYPE VARIABLE CAPACITANCE CAPACITOR
摘要 A first pump circuit generates a first voltage for decreasing the distance between primary electrodes. The first voltage is limited to a predetermined limit by a first limiter circuit. A second pump circuit generates a second voltage for keeping the distance between the primary electrodes constant. A third pump circuit generates the second voltage and has a supplying capacity smaller than the first one. The second voltage is limited by second and third limiter circuits. A ripple capacitor is charged up to the second voltage by the second pump circuit and the second limiter circuit within a period of time the first voltage is being generated. When a supplying voltage of the first pump circuit reaches to the first voltage, and a deformation stops, the second voltage is supplied by the third pump circuit and the third limiter circuit instead of the second pump circuit and the second limiter circuit.
申请公布号 US2012068672(A1) 申请公布日期 2012.03.22
申请号 US201113304997 申请日期 2011.11.28
申请人 SUZUKI ATSUSHI;KABUSHIKI KAISHA TOSHIBA 发明人 SUZUKI ATSUSHI
分类号 G05F1/10 主分类号 G05F1/10
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