发明名称 NON-VOLATILE MEMORY APPARATUS AND METHOD FOR OPERATING THEREOF
摘要 PURPOSE: A non-volatile memory apparatus and an operation method thereof are provided to store five-bit data in a pair of memory cells, thereby improving data storage capacity compared to a two-bit data storage case. CONSTITUTION: A non-volatile memory apparatus includes a memory array(110), operation circuit groups(130,140,150,160,170,180), and a control circuit(120). A memory cell block comprises memory cells connected to word lines. The operation circuit group is comprised in order to perform a read operation or a program operation of the memory cells. The control circuit controls the operation circuit group in order to select a threshold voltage level of a selected memory cell among an elimination level and five program levels according to inputted data.
申请公布号 KR20120028035(A) 申请公布日期 2012.03.22
申请号 KR20100089989 申请日期 2010.09.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 ANDREA GHILARDELLI
分类号 G11C16/34;G11C16/08;G11C16/10;G11C16/14 主分类号 G11C16/34
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