| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lithography method of a charged particle beam lithography device and a charged particle beam lithography device which can produce an accurate lithography of a pattern true to the original pattern data. <P>SOLUTION: A lithography method of a charged particle beam lithography device for sequentially performing shot of a charged particle beam variably formed in a resist applied on a material surface has a table for each individual shot which indicates the relation of a correction amount of sides according to the distance between adjacent shots due to the influence of front scattering. Data for a correction shot which has a side facing the adjacent shot moved in parallel are obtained from the table for each shot. A correction value of a proximity effect due to the influence of rear scattering is calculated based on the correction shot data to perform shot based on the correction shot data and the correction value. <P>COPYRIGHT: (C)2012,JPO&INPIT |
