发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level. |
申请公布号 |
US2012068160(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113075591 |
申请日期 |
2011.03.30 |
申请人 |
YAMAZAKI YUICHI;WADA MAKOTO;SAKAI TADASHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMAZAKI YUICHI;WADA MAKOTO;SAKAI TADASHI |
分类号 |
H01L29/12;B82Y99/00;H01L21/20 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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