发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
摘要 |
There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5. |
申请公布号 |
US2012067845(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113233082 |
申请日期 |
2011.09.15 |
申请人 |
MONDEN TAICHI;KITAGAWA JUNICHI;YAMASHITA JUN;NAKAMURA HIDEO;TOKYO ELECTRON LIMITED |
发明人 |
MONDEN TAICHI;KITAGAWA JUNICHI;YAMASHITA JUN;NAKAMURA HIDEO |
分类号 |
H01L21/3065;H01L21/306 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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