| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sulfonate and a derivative thereof each suitable as a raw material for a photoacid generator in a resist material or as a photoacid generator which can suppress elution into water particularly in ArF immersion exposure, also suppresses formation of a foreign substance peculiar to immersion exposure, and can be effectively used, and a method for producing those. <P>SOLUTION: The sulfonate is represented by general formula (1), wherein R<SP POS="POST">1</SP>is 1-20C alkyl, 6-15C aryl or 4-15C heteroaryl, and M<SP POS="POST">+</SP>is an Li ion, an Na ion, a K ion, an ammonium ion or a tetramethylammonium ion. A sulfonic acid exhibits strong acidity because of partial substitution by fluorine at α,β-positions, facilitates introduction of various substituents, and ensures a wide range of molecular design. A photoacid generator generating the sulfonic acid can be used in various steps in a device manufacturing process without problems, suppresses elution into water in ArF immersion exposure, and reduces the effect of water remaining on a wafer. Since the ester moiety is hydrolyzed under basic conditions, by proper treatment of resist waste liquid, conversion to a low molecular weight low-accumulative compound is possible and combustibility in combustion disposable is high. <P>COPYRIGHT: (C)2012,JPO&INPIT |
