METHOD FOR FORMING PATTERNS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a pattern of a semiconductor device is provided to perform a double patterning process using a spin coating method, thereby reducing costs and processing time in forming micro patterns of the semiconductor device. CONSTITUTION: A mask pattern is formed on a substrate(100). A CAP(Chemical Attach Process) material layer covers the mask pattern. A part of the CAP material layer is bonded with the mask pattern by a first bake process and a first developing process to form a CAP bonding layer. A medium material layer covers the mask pattern and the CAP bonding layer. The CAP bonding layer is left through a second bake process and a second developing process and the mask pattern and the medium material layer are eliminated.