发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 Provided is a substrate processing apparatus capable of maintaining a temperature of a furnace port part at a heat-resistant temperature or less of each member constituting the furnace part. The substrate processing apparatus includes a process chamber configured to process a plurality of substrates vertically stacked at predetermined intervals; a substrate retainer configured to hold the plurality of substrates in the process chamber; and a first heat exchanger installed in the process chamber to support the substrate retainer from a lower portion of the substrate retainer, and configured to perform a heat exchange with a gas flowing in a downward direction from a side of the substrate retainer in the process chamber, wherein the first heat exchanger includes a hollow cylindrical insulating tube vertically extending in the downward direction and an insulating plate installed in the insulating tube, and regions in the insulating tube over and under the insulating plate are spatially connected to each other.
申请公布号 US2012067869(A1) 申请公布日期 2012.03.22
申请号 US201113229543 申请日期 2011.09.09
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 SHIRAKO KENJI;YAMAGUCHI TAKATOMO;SAIDO SHUHEI;SATO AKIHIRO
分类号 H05B6/10;F28F13/00 主分类号 H05B6/10
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