发明名称 |
PLASMA ENHANCED ATOMIC LAYER DEPOSITION APPARATUS AND THE CONTROLLING METHOD THEREOF |
摘要 |
This prevent disclosure provides a plasma enhanced atomic layer deposition apparatus and the controlling method thereof. The plasma enhanced atomic layer deposition apparatus includes: a plurality of reaction chambers, each of the reaction chambers having a first reaction space and a second reaction space; an adjustable partition unit controlled to separate or communicate the first and the second reaction spaces; and a plurality of heating carriers respectively disposed in the plurality of reaction chambers. The method manipulates the movement of the partition plate, leading to separation or communication between the first and second reaction spaces, so as to avoid the interference or inter-reaction between process gases and the resultant particles contaminating the substrates. |
申请公布号 |
US2012070590(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US20100970403 |
申请日期 |
2010.12.16 |
申请人 |
HUANG JEN-RONG;SHEN TEAN-MU;LEE KANG-FENG;CHIANG CHIN-CHONG;LEE SHENG-LANG;HO JUNG-CHEN;WANG CHING-CHIUN;INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
HUANG JEN-RONG;SHEN TEAN-MU;LEE KANG-FENG;CHIANG CHIN-CHONG;LEE SHENG-LANG;HO JUNG-CHEN;WANG CHING-CHIUN |
分类号 |
C23C16/448;C23C16/02 |
主分类号 |
C23C16/448 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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