| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device capable of lowering a loss while maintaining a basic characteristic of a diode. <P>SOLUTION: The semiconductor device in an embodiment comprises a first conductive-type semiconductor substrate, a first conductive-type first semiconductor layer, a second conductive-type first conductor area, a second conductive-type second semiconductor area, a first conductive-type third semiconductor area, a first electrode, and a second electrode. The second conductive-type first semiconductor area is selectively formed at one part on the first semiconductor layer. The second conductive-type second semiconductor area is selectively formed to reach inside the first semiconductor layer at another part on the first semiconductor layer, so as to have a higher concentration of impurities than that of the first semiconductor area. The first electrode is selectively formed on the second and third semiconductor areas. The second electrode is formed to contact a rear face of the semiconductor substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
