发明名称 Method for Producing Compound Semiconductor, Method for Manufacturing Photoelectric Conversion Device, and Solution for Forming Semiconductor
摘要 A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.
申请公布号 US2012070937(A1) 申请公布日期 2012.03.22
申请号 US201013320895 申请日期 2010.07.27
申请人 INAI SEIICHIRO;OKAWA YOSHIHIDE;TANAKA ISAMU;YAMADA KOICHIRO;KYOCERA CORPORATION 发明人 INAI SEIICHIRO;OKAWA YOSHIHIDE;TANAKA ISAMU;YAMADA KOICHIRO
分类号 H01L31/18;H01B1/02;H01L21/208 主分类号 H01L31/18
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