发明名称 |
Method for Producing Compound Semiconductor, Method for Manufacturing Photoelectric Conversion Device, and Solution for Forming Semiconductor |
摘要 |
A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat. |
申请公布号 |
US2012070937(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201013320895 |
申请日期 |
2010.07.27 |
申请人 |
INAI SEIICHIRO;OKAWA YOSHIHIDE;TANAKA ISAMU;YAMADA KOICHIRO;KYOCERA CORPORATION |
发明人 |
INAI SEIICHIRO;OKAWA YOSHIHIDE;TANAKA ISAMU;YAMADA KOICHIRO |
分类号 |
H01L31/18;H01B1/02;H01L21/208 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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