发明名称 Field effect transistor
摘要 A self repairing field effect transistor (FET) device, in accordance with one embodiment, includes a plurality of FET cells each having a fuse link. The fuse links are adapted to blow during a high current event in a corresponding cell.
申请公布号 GB2469592(B) 申请公布日期 2012.03.21
申请号 GB20100011868 申请日期 2009.02.13
申请人 VISHAY-SILICONIX 发明人 ROBERT XU
分类号 H01L27/088;H01L21/336;H01L23/525;H01L29/417;H01L29/78;H01L29/808 主分类号 H01L27/088
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