NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS

摘要

PURPOSE: A naphthalene derivative, a manufacturing method, resist underlayer material, and resist underlayer formation method, and a pattern formation method are provided to improve etching-resistive characteristic, heat resistance, and solvent resistance. CONSTITUTION: A naphthalene derivative is represented by chemical formula 1 or 2. In the chemical formula 1, ring structured Ar1 and Ar2 respectively stand for benzene ring or naphthalene ring. n stands for arbitrary natural number which has polystyrene conversion average molecular weight of 100000 or less by gel permeation chromatography. In the chemical formula 2, the ring structured Ar1 and Ar2 stand for benzene ring or naphthalene ring. The resist lower layer film material uses the naphthalene derivative or a polymer which contains the naphthalene derivative as part of recurring unit.