发明名称 |
Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer |
摘要 |
A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed. |
申请公布号 |
US8138057(B2) |
申请公布日期 |
2012.03.20 |
申请号 |
US20080196566 |
申请日期 |
2008.08.22 |
申请人 |
LEE JUNG-HO;CHOI JUNG-SIK;CHO JUN-HYUN;EOM TAE-MIN;LEE JI-HYUN;SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE JUNG-HO;CHOI JUNG-SIK;CHO JUN-HYUN;EOM TAE-MIN;LEE JI-HYUN |
分类号 |
H01L21/20;H01L21/336 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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