发明名称 Peeling apparatus and manufacturing apparatus of semiconductor device
摘要 An object is to eliminate electric discharge due to static electricity generated by peeling when an element formation layer including a semiconductor element is peeled from a substrate used for manufacturing the semiconductor element. A substrate over which an element formation layer and a peeling layer are formed and a film are made to go through a gap between pressurization rollers. The film is attached to the element formation layer between the pressurization rollers. The film is bent along a curved surface of the pressurization roller on a side of the pressurization rollers, where the film is collected, and accordingly, peeling is generated between the element formation layer and the peeling layer and the element formation layer is transferred to the film. Liquid such as pure water is sequentially supplied by a nozzle to a gap between the element formation layer and the peeling layer, which is generated by peeling, so that electric charge generated on surfaces of the element formation layer and the peeling layer is diffused by the liquid.
申请公布号 US8137417(B2) 申请公布日期 2012.03.20
申请号 US20070902514 申请日期 2007.09.21
申请人 EGUCHI SHINGO;MONMA YOHEI;TANI ATSUHIRO;HIROSUE MISAKO;HASHIMOTO KENICHI;HOSAKA YASUHARU;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 EGUCHI SHINGO;MONMA YOHEI;TANI ATSUHIRO;HIROSUE MISAKO;HASHIMOTO KENICHI;HOSAKA YASUHARU
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
主权项
地址