发明名称 Epitaxial growth of ZnO with controlled atmosphere
摘要 A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the substrate by alternately repeating a Zn-rich condition period and an O-rich condition period; and (c) supplying conductivity type determining impurities above the surface of the substrate while Zn and O are supplied at the step (b).
申请公布号 US8137458(B2) 申请公布日期 2012.03.20
申请号 US20080028310 申请日期 2008.02.08
申请人 KATO HIROYUKI;SANO MICHIHIRO;STANLEY ELECTRIC CO., LTD. 发明人 KATO HIROYUKI;SANO MICHIHIRO
分类号 C30B29/16 主分类号 C30B29/16
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