发明名称 |
Semiconductor device comprising isolation trenches inducing different types of strain |
摘要 |
By forming isolation trenches of different types of intrinsic stress on the basis of separate process sequences, the strain characteristics of adjacent active semiconductor regions may be adjusted so as to obtain overall device performance. For example, highly stressed dielectric fill material including compressive and tensile stress may be appropriately provided in the respective isolation trenches in order to correspondingly adapt the charge carrier mobility of respective channel regions. |
申请公布号 |
US8138571(B2) |
申请公布日期 |
2012.03.20 |
申请号 |
US20090419500 |
申请日期 |
2009.04.07 |
申请人 |
SCHWAN CHRISTOPH;BLOOMQUIST JOE;JAVORKA PETER;HORSTMANN MANFRED;BEYER SVEN;FORSBERG MARKUS;WIRBELEIT FRANK;ROMERO KARLA;GLOBALFOUNDRIES INC. |
发明人 |
SCHWAN CHRISTOPH;BLOOMQUIST JOE;JAVORKA PETER;HORSTMANN MANFRED;BEYER SVEN;FORSBERG MARKUS;WIRBELEIT FRANK;ROMERO KARLA |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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